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Photoelectric Characteristics of Photodiodes, Total:193 items.
In the international standard classification, Photoelectric Characteristics of Photodiodes involves: Fibre optic communications, Optoelectronics. Laser equipment, Semiconductor devices, Lamps and related equipment, Small craft, Printed circuits and boards, Solar energy engineering, Electronic display devices, Television and radio broadcasting, Audio, video and audiovisual engineering, Road vehicle systems, Nuclear energy engineering, Vocabularies, Semiconducting materials, Electrical and electronic testing.
RO-ASRO, Photoelectric Characteristics of Photodiodes
- STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
- STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
- STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics
- STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
Professional Standard - Post and Telecommunication, Photoelectric Characteristics of Photodiodes
- YD/T 2001.1-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 1:Specification template for essential rating and characteristics
- YD/T 835-1996 Test method of avalanche photodiodes
ES-UNE, Photoelectric Characteristics of Photodiodes
- UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
- UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
- UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)
- UNE-EN 120008:1993 BDS: LIGHT EMITTING DIODES AND INFRARED EMITTING DIODES FOR FIBRE OPTIC SYSTEM OR SUB-SYSTEM. (Endorsed by AENOR in September of 1996.)
Professional Standard - Military and Civilian Products, Photoelectric Characteristics of Photodiodes
- WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
- WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
- WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
German Institute for Standardization, Photoelectric Characteristics of Photodiodes
- DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
- DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
- DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
- DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
- DIN EN 62384:2007 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006); German version EN 62384:2006
European Standard for Electrical and Electronic Components, Photoelectric Characteristics of Photodiodes
- EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
- EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications
British Standards Institution (BSI), Photoelectric Characteristics of Photodiodes
- BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
- BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
- BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
- BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
- 18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
- BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- 24/30490678 DC BS IEC 60747-5-18 Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method light emitting diodesof the macro photoluminescence for epitaxial wafers of micro light emitting diodes
- BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
- BS PD IEC/TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
- BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- BS EN 62341-6-1:2011 Organic light emitting diode (OLED) displays. Measuring methods of optical and electro-optical parameters
- 18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
- BS IEC 60747-5-15:2022 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
- BS EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
- BS ISO 13207-1:2012 Road vehicles. LED lamp characteristics for bulb compatible failure detection. LED lamps used as direction indicators
- BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
- PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
(U.S.) Telecommunications Industries Association?, Photoelectric Characteristics of Photodiodes
Association Francaise de Normalisation, Photoelectric Characteristics of Photodiodes
- NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}
- NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
- NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
- NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
- NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
- NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
- NF C93-872:1987 Digital receivers with pin photodiode.
- NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
- NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
- NF C71-305*NF EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements.
- NF EN IEC 63286:2022 Flexible Organic Light Emitting Diode (OLED) Panels for General Lighting – Performance Requirements
Group Standards of the People's Republic of China, Photoelectric Characteristics of Photodiodes
- T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures
- T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
- T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
- T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
- T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
SE-SIS, Photoelectric Characteristics of Photodiodes
- SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
- SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications
- SIS SS CECC 20002-1984 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays
SCC, Photoelectric Characteristics of Photodiodes
- DANSK DS/EN 120005:2016 Blank Detail Specification: Photodiodes, photodiode arrays (not intended for fibre optic applications)
- CSA C865.2-2023 Light-emitting diode drivers — Performance characteristics
- DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
- DANSK DS/IEC TS 62916:2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing
- DIN EN 120006:1996 Blank detail specification: PIN-photodiodes for fibre optic applications; German version EN 120006:1992
- ANSI C82.18-2022 American National Standard for Light-Emitting Diode Drivers - Performance Characteristics
- ANSI C82.18-2023 American National Standard for Light-Emitting Diode Drivers - Performance Characteristics
- CSA C22.2 No.250.13-2020 Appareillages à diodes électroluminescentes (DEL) pour applications d’éclairage
- CSA C865.1-2023 Pilotes de diodes électroluminescentes — méthodes de mesure
- BS CECC 20001:1983 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes, light emitting diode arrays
Lithuanian Standards Office , Photoelectric Characteristics of Photodiodes
- LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
- LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
Korean Agency for Technology and Standards (KATS), Photoelectric Characteristics of Photodiodes
CZ-CSN, Photoelectric Characteristics of Photodiodes
- CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
- CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
Japanese Industrial Standards Committee (JISC), Photoelectric Characteristics of Photodiodes
- JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
- JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
- JIS C 8152-2:2012 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines
- JIS C 8152-2 AMD 1:2014 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines (Amendment 1)
- JIS C 8152-1:2012 Photometry of white light emitting diode for general lighting -- Part 1: LED packages
- JIS C 7035:1985 Light emitting diodes (for indication)
- JIS C 5950:1997 General rules of light emitting diodes for fiber optic transmission
International Electrotechnical Commission (IEC), Photoelectric Characteristics of Photodiodes
- IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
- IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
- IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
- IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
- IEC TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
- IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
- IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
- IEC 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
Professional Standard - Electron, Photoelectric Characteristics of Photodiodes
- SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
- SJ/T 2216-2015 Technical specification for photodiode of silicon
- SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
- SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
- SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
- SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
- SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
- SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
- SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
- SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
- SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
- SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
- SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
- SJ 2216-1982 Silicon photodiodes
- SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
- SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
- SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
- SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
- SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
- SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
- SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
- SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
- SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
- SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
- SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
- SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
- SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
- SJ/T 11397-2009 Phosphors for light emitting diodes
- SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
Professional Standard - Machinery, Photoelectric Characteristics of Photodiodes
Defense Logistics Agency, Photoelectric Characteristics of Photodiodes
郵電部, Photoelectric Characteristics of Photodiodes
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Photoelectric Characteristics of Photodiodes
- GB/T 5295-1985 The spectral response characteristic series of photocathodes
- GB 5295-1985 The spectral response characteristic series of photocathodes
- GB/T 15651.7-2024 Semiconductor devices Part 5-7: Optoelectronic devices Photodiodes and phototransistors
- GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
- GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
- GB/T 43787-2024 Optical performance testing method for curved organic light-emitting diode (OLED) light sources
GSO, Photoelectric Characteristics of Photodiodes
RU-GOST R, Photoelectric Characteristics of Photodiodes
- GOST 21316.7-1975 Photocells. Determination method of correspondence of current-illumination characteristic of photocell to given linearity limit in pulsed operation conditions
- GOST 21316.6-1975 Photocells. Determination method of correspondence of current-illumination characteristic of photocell to given linearity limit in continuous operation conditions
- GOST R 51106-1997 Lazers injection, lazer heads, lazers diodes matices, lazers diodes. Methods for measurement of parameters
- GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
- GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
- GOST 11612.1-1981 Photomultipliers. Measuring method of catode luminous sensitivity
PT-IPQ, Photoelectric Characteristics of Photodiodes
- NP 3234-2-1987 Electronic originals. Electroluminescent diodes. Electroluminescent diode matrix, detailed specifications
IECQ - IEC: Quality Assessment System for Electronic Components, Photoelectric Characteristics of Photodiodes
- PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays
Japan Electronics and Information Technology Industries Association, Photoelectric Characteristics of Photodiodes
JP-JEITA, Photoelectric Characteristics of Photodiodes
未注明發(fā)布機構(gòu), Photoelectric Characteristics of Photodiodes
- ANSI C78.53-2019 Electric Lamps — Performance Specifications for Direct Replacement LED (Light Emitting Diode) Lamps
- ANSI C78.51-2016 Electric Lamps — LED (Light Emitting Diode) Lamps — Method of Designation
- NEMA C82.18-2022 American National Standard for Light-Emitting Diode Drivers— Performance Characteristics
工業(yè)和信息化部, Photoelectric Characteristics of Photodiodes
- SJ/T 11624-2016 Specification for light-emitting diodes for use in light-emitting diode (LED) displays
GOST, Photoelectric Characteristics of Photodiodes
- GOST R 70998-2023 Injection lasers, laser heads, laser diodes matrices, laser diodes. Parameters system
國家市場監(jiān)督管理總局、中國國家標準化管理委員會, Photoelectric Characteristics of Photodiodes
- GB/T 38621-2020 Transient thermal test method for light emitting diode modules
NEMA - National Electrical Manufacturers Association, Photoelectric Characteristics of Photodiodes
- NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
IEC - International Electrotechnical Commission, Photoelectric Characteristics of Photodiodes
- TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)
Taiwan Provincial Standard of the People's Republic of China, Photoelectric Characteristics of Photodiodes
- CNS 14553-2001 Functions and properties testing for LED pedestrian signal light modules (→CNS 14546)
- CNS 14547-2001 Functions and properties testing for LED road vehicle traffic control signal light modules (→CNS 14546)
- CNS 14550-2001 Functions and properties testing for LED road lane control signal light modules (→CNS14546)
- CNS 13809-1997 Light Emitting Diode Dice
- CNS 11829-1987 Light Emitting Diodes (for Indication)
- CNS 13808-1997 Epitaxial Wafers for Light Emitting Diodes
U.S. Military Regulations and Norms, Photoelectric Characteristics of Photodiodes
International Commission on Illumination (CIE), Photoelectric Characteristics of Photodiodes
中華人民共和國國家質(zhì)量監(jiān)督檢驗檢疫總局、中國國家標準化管理委員會, Photoelectric Characteristics of Photodiodes
- GB/T 33762-2017 Method of measurement for display performance of organic light-emitting diode(OLED) television
TIA - Telecommunications Industry Association, Photoelectric Characteristics of Photodiodes
Jiangxi Provincial Standard of the People's Republic of China, Photoelectric Characteristics of Photodiodes